Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer,Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer, High power gain It is used, but tested good,Pout>30W, Gp>14,7dB @Vdd=12,5V,f=175MHz, D30HVF1 is a MOS FET type transistor specifically, designed for VHF RF power amplifiers applications.RF TRANSISTOR amplifer Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W.

Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer




Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer

Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer. Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz. D30HVF1 is a MOS FET type transistor specifically. designed for VHF RF power amplifiers applications. High power gain It is used, but tested good.. Condition: Used : An item that has been used previously. The item may have some signs of cosmetic wear, but is fully operational and functions as intended. This item may be a floor model or store return that has been used. See the seller’s listing for full details and description of any imperfections. See all condition definitions , Seller Notes: “Used , work well” ,

Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer

Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer
Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer
Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer

Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer

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Used Mitsubishi RD30HVF1 MOSFET Power 175MHz 30W RF TRANSISTOR amplifer
High power gain It is used, but tested good,Pout>30W, Gp>14,7dB @Vdd=12,5V,f=175MHz, D30HVF1 is a MOS FET type transistor specifically, designed for VHF RF power amplifiers applications.